The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 01, 2008
Filed:
Aug. 22, 2005
Sun-ghil Lee, Gyeonggi-do, KR;
Yu-gyun Shin, Gyeonggi-do, KR;
Jong-wook Lee, Gyeonggi-do, KR;
Deok-hyung Lee, Gyeonggi-do, KR;
In-soo Jung, Gyeonggi-do, KR;
Young-eun Lee, Gyeonggi-do, KR;
Sun-Ghil Lee, Gyeonggi-do, KR;
Yu-Gyun Shin, Gyeonggi-do, KR;
Jong-Wook Lee, Gyeonggi-do, KR;
Deok-Hyung Lee, Gyeonggi-do, KR;
In-Soo Jung, Gyeonggi-do, KR;
Young-Eun Lee, Gyeonggi-do, KR;
Samsung Electronic Co., Ltd., Gyeonggi-do, KR;
Abstract
Methods of etching a semiconductor substrate may include providing a first gas that is chemically reactive with respect to the semiconductor substrate, and while providing the first gas, providing a second gas different than the first gas. More particularly, a molecule of the second gas may include a hydrogen atom, and the second gas may lower a temperature at which the first gas chemically reacts with the semiconductor substrate. The mixture of the first and second gases may be provided adjacent the semiconductor substrate to etch the semiconductor substrate.