The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 7393459 B1

PDF
Full Text
Expired
Date of Patent:
Jul. 01, 2008

Filed:

Sep. 10, 2004
Applicants:

Matthew F Davis, Brookdale, CA (US);

Lei Lian, Santa Clara, CA (US);

Quentin E. Walker, Palo Alto, CA (US);

Inventors:

Matthew F Davis, Brookdale, CA (US);

Lei Lian, Santa Clara, CA (US);

Quentin E. Walker, Palo Alto, CA (US);

Assignee:

Applied Materials, Inc., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01L 21/30 (2006.01); H01L 21/66 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method for automatic determination of a state of a substrate in a plasma processing chamber is provided. Substrate reflectance data is collected in a processing chamber prior to processing to be analyzed with reference reflectance data to determine if the substrate state meets a control criterion. The substrate state may define the thickness and the qualities of the films on the substrate, the critical dimensions of the different layers on the substrate. The reflectance data is analyzed using a multi-variant analysis technique, such as principle component analysis. In addition to analyzing substrate state prior to processing, substrate reflectance could also be collected in a processing chamber during processing to be analyzed with reference reflectance data to further determine if the substrate state and/or the substrate processing are meeting a control criterion.


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