The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 24, 2008
Filed:
May. 03, 2006
Joo-ah Kang, Seoul, KR;
Jong-hwa Kim, Hwaseong-si, KR;
Moo-sung Kim, Yongin-si, KR;
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Abstract
In one aspect, a non-volatile memory device includes a non-volatile memory cell array and a page buffer. The page buffer includes a sense node selectively connected to a bit line of the memory cell array, a main latch circuit including first and second main latch nodes, where the first main latch node is selectively connected to the sense node, and a latch input node selectively connected to the first and second main latch nodes. The page buffer further includes a cache latch circuit including first and second cache latch nodes, a switching circuit which selectively connects the second cache latch node to the latch input node, and a shared sense circuit connected between to the latch input node and a reference potential. The shared sense circuit selectively connects the latch input node to the reference potential in response to a voltage of the sense node and a voltage of the first cache latch node.