The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 7391093 B1

PDF
Full Text
Expired
Date of Patent:
Jun. 24, 2008

Filed:

Apr. 06, 2005
Applicants:

Mitsuru Watanabe, Hyogo, JP;

Tetsuya Fukui, Hyogo, JP;

Inventors:

Mitsuru Watanabe, Hyogo, JP;

Tetsuya Fukui, Hyogo, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/095 (2006.01);
U.S. Cl.
CPC ...
Abstract

A semiconductor device has a semiconductor device chip with upper and lower terminal electrodes, and upper and lower frames bonded to the upper and lower terminal electrodes, respectively, with solder material, wherein the semiconductor device chip includes: a semiconductor layer of a first conductivity type; a diffusion layer of a second conductivity type, which is selectively formed in the semiconductor layer; a plurality of guard-ring layers of the second conductivity type, which are formed outside of the diffusion layer in the semiconductor layer; an insulating film formed on the semiconductor layer; and a field plate formed of a poly-crystalline silicon film embedded in the insulating film.


Find Patent Forward Citations

Watanabe, Mitsuru. (2008). Semiconductor device with a guard-ring structure and a field plate formed of polycrystalline silicon film embedded in an insulating film (U.S. Patent No. 7391093). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7391093

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