The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 24, 2008

Filed:

Jun. 05, 2006
Applicants:

Chun-yao Ou, Hsinchu, TW;

Hua-chi Cheng, Cyonglin Township, Hsinchu County, TW;

Ming-nan Hsiao, Tai Chung, TW;

Bor-chuan Chuang, Tai Nan Hsien, TW;

Chao-jen Wang, Hsinchu, TW;

Inventors:

Chun-Yao Ou, Hsinchu, TW;

Hua-Chi Cheng, Cyonglin Township, Hsinchu County, TW;

Ming-Nan Hsiao, Tai Chung, TW;

Bor-Chuan Chuang, Tai Nan Hsien, TW;

Chao-Jen Wang, Hsinchu, TW;

Assignees:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/336 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method of fabricating an active layer thin film by a metal-chalcogenide precursor solution is provided, including the steps of: synthesizing a metal-chalcogenide precursor containing benzyl or benzyl derivative; dissolving the precursor in a solvent to produce a precursor solution, wherein a chalcogen element or compound can be added to the precursor solution to adjust the molar ratio of metal ion to chalcogen; and then applying the precursor solution onto a substrate in a specific coating manner, to form a film of the metal-chalcogenide after a curing process. Thereby, the existing method wherein an amorphous silicon active layer film is fabricated by plasma enhanced chemical vapor deposition (PECVD) is replaced.


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