The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 24, 2008
Filed:
Oct. 22, 2007
Applicants:
Marc Demand, Saint-Jean-Geest, BE;
Denis Shamiryan, Leuven, BE;
Vasile Paraschiv, Kessel-lo, BE;
Inventors:
Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/336 (2006.01); H01L 21/8234 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method is provided for the patterning of a stack comprising elements that do not form volatile compounds during conventional reactive ion etching. More specifically the element(s) are Lanthanide elements such as Ytterbium (Yb) and the patterning preferably relates to the dry etching of silicon and/or germanium comprising structures (e.g. gates) doped with a Lanthanide e.g. Ytterbium (Yb doped gates). In case the silicon and/or germanium comprising structure is a gate electrode the silicon and/or germanium is doped with a Lanthanide (e.g. Yb) for modeling the work function of a gate electrode.