The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 24, 2008
Filed:
Sep. 08, 2005
Kazuo Kawamura, Kawasaki, JP;
Yosuke Shimamune, Kawasaki, JP;
Kazuo Kawamura, Kawasaki, JP;
Yosuke Shimamune, Kawasaki, JP;
Fujitsu Limited, Kawasaki, JP;
Abstract
The semiconductor device fabrication method comprising the step of forming a gate electrode on a semiconductor substrate; the step of forming a source/drain diffused layer in the semiconductor substrate on both sides of the gate electrode; the step of burying a silicon germanium layer in the source/drain diffused layer; the step of forming an amorphous layer at an upper part of the silicon germanium layer; the step of forming a nickel film on the amorphous layer; and the step of making thermal processing to react the nickel film and the amorphous layer with each other to form a silicide film on the silicon germanium layer.