The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 24, 2008
Filed:
Mar. 31, 2005
Tetsuhiro Iida, Kanagawa, JP;
Akiko Noda, Kanagawa, JP;
Junsuke Tomioka, Kanagawa, JP;
Sumco Techxiv Corporation, Nagasaki, JP;
Abstract
A semiconductor single crystal manufacturing apparatus which can manufacture a single crystal of high oxygen concentration to that of low oxygen concentration within a prescribed standard range of oxygen concentration, as a wafer material for semiconductor integrated circuits, with a high yield, is provided. Heat shieldsare provided in the entire annular area between respective adjacent heaters of the heatersfor heating the cruciblefrom the outside periphery side. By using the heat shieldsfor localizing the respective heating regions for the heaters to actively control the temperature distribution for the crucibleand meltin the crucible, a single crystal of high oxygen concentration to that of low oxygen concentration can be manufactured within a prescribed standard range of oxygen concentration with a high yield.