The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 17, 2008

Filed:

Jun. 20, 2003
Applicants:

Tetsuo Yamada, Ube, JP;

Kosuke Nishimura, Ube, JP;

Keigo Nagao, Ube, JP;

Inventors:

Tetsuo Yamada, Ube, JP;

Kosuke Nishimura, Ube, JP;

Keigo Nagao, Ube, JP;

Assignee:

UBE Industries, Ltd., Yamaguchi, JP;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 41/08 (2006.01);
U.S. Cl.
CPC ...
Abstract

A thin film piezoelectric device includes a substrate () having via holes () and a piezoelectric laminated structure () consisting of a lower electrode (), a piezoelectric film (), and an upper electrode () formed on the substrate () via an insulation layer (). A plurality of thin film piezoelectric resonators () are formed for the via holes (). The piezoelectric laminated structure () includes diaphragms () located to face the via holes () and a support area other than those. The thin film piezoelectric resonators () are electrically connected by the lower electrode (). When the straight line in the substrate plane passing through the centers () of the diaphragms () of the thin film piezoelectric resonators () has the length Dof the segment passing through the support area and the distance between the centers of the diaphragms of the thin film piezoelectric resonators () is Dthe ratio D/Dis 0.1 to 0.5. The via hole () is fabricated by the deep graving type reactive ion etching method.


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