The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 10, 2008
Filed:
Dec. 13, 2004
Chen-ting Lin, Hsinchu, TW;
Chih-hung Wu, Taipei, TW;
Mei-yen LI, Jhudong Township, Hsinchu County, TW;
Chen-Ting Lin, Hsinchu, TW;
Chih-Hung Wu, Taipei, TW;
Mei-Yen Li, Jhudong Township, Hsinchu County, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Abstract
A yield analysis method. First, a wafer having multiple dies is inspected to obtain wafer defect data containing defect information for every die in the wafer. Then a wafer map and an overall yield are generated according to the wafer defect data. The wafer map displays defective dies and defect-free dies in the wafer. Then, first and second systematic limited yields are calculated in accordance with the wafer defect data and the wafer map, wherein the first systematic limited yield is calculated excluding defective dies with localized distribution, and the second systematic limited yield is calculated excluding defective dies with repeated distribution. Then a random defect limited yield is determined in accordance with the overall yield, the first systematic limited yield, and the second systematic limited yield.