The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 10, 2008
Filed:
Mar. 24, 2005
Daisuke Abe, Suwa, JP;
Daisuke Abe, Suwa, JP;
Seiko Epson Corporation, Tokyo, JP;
Abstract
Exemplary embodiments of the invention provide techniques that enable avoidance of the concentration of an electric field at the edge of a semiconductor film in a semiconductor device such as a thin film transistor, thereby enhancing the reliability. Exemplary embodiments provide a method of manufacturing a semiconductor device using a structure in which a semiconductor film, a dielectric film, and an electrode are deposited. The method of manufacturing a semiconductor device includes: forming an island-shape semiconductor film on one dielectric surface of a substrate, the substrate having at least one dielectric surface; forming a first dielectric film on the one surface of the substrate so as to cover the semiconductor film and have a film thickness of the portion other than over the semiconductor film equal to or larger than that of the semiconductor film; reducing a film thickness of the first dielectric film at least in a region over the semiconductor film; and forming an electrode so as to be on the first dielectric film after reduction of the film thickness and pass over a predetermined location of the semiconductor film.