The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 10, 2008
Filed:
Dec. 05, 2006
Steven Avanzino, Cupertino, CA (US);
Sameer Haddad, San Jose, CA (US);
An Chen, Sunnyvale, CA (US);
Yi-ching Jean Wu, Sunnyvale, CA (US);
Suzette K. Pangrle, Cupertino, CA (US);
Jeffrey A. Shields, Sunnyvale, CA (US);
Steven Avanzino, Cupertino, CA (US);
Sameer Haddad, San Jose, CA (US);
An Chen, Sunnyvale, CA (US);
Yi-Ching Jean Wu, Sunnyvale, CA (US);
Suzette K. Pangrle, Cupertino, CA (US);
Jeffrey A. Shields, Sunnyvale, CA (US);
Spansion LLC, Sunnyvale, CA (US);
Abstract
In the method of fabricating a metal-insulator-metal (MIM) device, a first electrode of α-Ta is provided. The Ta of the first electrode is oxidized to form a TaOlayer on the first electrode. A second electrode of β-Ta is provided on the TaOlayer. Such a device exhibits strong data retention, along with resistance to performance degradation under high temperatures.