The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 03, 2008
Filed:
Jul. 06, 2005
Yue Liu, Fremont, CA (US);
Daniel G. Abels, San Francisco, CA (US);
Moris Dovek, San Jose, CA (US);
Min LI, Dublin, CA (US);
Pokang Wang, San Jose, CA (US);
Mao-min Chen, San Jose, CA (US);
Yue Liu, Fremont, CA (US);
Daniel G. Abels, San Francisco, CA (US);
Moris Dovek, San Jose, CA (US);
Min Li, Dublin, CA (US);
Pokang Wang, San Jose, CA (US);
Mao-Min Chen, San Jose, CA (US);
Headway Technologies, Inc., Milpitas, CA (US);
Abstract
The problem of increasing the output signal from a CCP-CPP GMR device without having it overheat has been overcome by placing materials that have different thermoelectric potentials on opposing sides of the spacer layer. Heat from the hot junction is removed at the substrate, which acts as a heat sink, resulting in a net local cooling of the confined current spacer layer, enabling it to operate at both higher input voltage increased reliability.