The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 03, 2008

Filed:

Apr. 19, 2006
Applicant:

Yin-chang Chen, Hsinchu County, TW;

Inventor:

Yin-Chang Chen, Hsinchu County, TW;

Assignee:

eMemory Technology Inc., Hsin-Chu, TW;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G05F 1/10 (2006.01);
U.S. Cl.
CPC ...
Abstract

The voltage source and current source circuits including an amplifier, a first current mirror circuit, a first PMOS transistor, a second current mirror circuit and a NMOS transistor are provided. The amplifier has a positive input terminal and a negative input terminal coupled to the source terminal of the NMOS transistor. The first current mirror circuit is coupled to a reference current and duplicates the reference current to the source terminal of the first PMOS transistor. The first PMOS transistor has a drain terminal, a gate terminal and a source terminal. The drain terminal of the NMOS transistor is coupled to the third current terminal, and the gate terminal of the NMOS transistor is coupled to the source terminal of the first PMOS transistor. The second current mirror circuit duplicates the current from the third current terminal.


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