The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 03, 2008
Filed:
Aug. 26, 2005
Ming-hsiang Hsueh, Hsinchu, TW;
Ming-Hsiang Hsueh, Hsinchu, TW;
Macronix International Co., Ltd., Hsinchu, TW;
Abstract
A chalcogenide memory cell includes a lower electrode, a chalcogenide layer, and an upper electrode. The lower electrode includes a tapered cavity. The chalcogenide layer is formed in the tapered cavity of the lower electrode. One side of the chalcogenide layer is adjacent to the lower electrode. The upper electrode is formed in a second cavity formed by the chalcogenide layer so that the upper electrode substantially fills the second cavity. The upper electrode is adjacent to the other side of the chalcogenide layer. Information is stored and retrieved by passing current between the upper electrode and the lower electrode. The tapered cavity of the lower electrode is formed through anisotropic etching or through sidewall-application. Undesired currents are prevented using an additional dielectric layer or by using an additional conductive layer that forms a p-n junction with the lower electrode.