The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 7381662 B1

PDF
Full Text
Expired
Date of Patent:
Jun. 03, 2008

Filed:

Mar. 14, 2006
Applicants:

Dong Niu, Tualatin, OR (US);

Haiying Fu, West Linn, OR (US);

Brian LU, Fremont, CA (US);

Feng Wang, Fremont, CA (US);

Inventors:

Dong Niu, Tualatin, OR (US);

Haiying Fu, West Linn, OR (US);

Brian Lu, Fremont, CA (US);

Feng Wang, Fremont, CA (US);

Assignee:

Novellus Systems, Inc., San Jose, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/26 (2006.01); H01L 21/76 (2006.01);
U.S. Cl.
CPC ...
Abstract

Methods for improving the mechanical properties of a CDO film are provided. The methods involve, for instance, providing either a dense CDO film or a porous CDO film in which the porogen has been removed followed by curing the CDO film at an elevated temperature using either a UV light treatment, an e-beam treatment, or a plasma treatment such that the curing improves the mechanical toughness of the CDO dielectric film.


Find Patent Forward Citations

Niu, Dong. (2008). Methods for improving the cracking resistance of low-k dielectric materials (U.S. Patent No. 7381662). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7381662

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