The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 03, 2008
Filed:
Jul. 26, 2005
Tetsuya Inui, Nara, JP;
Junichiro Nakayama, Kyoto-fu, JP;
Yoshihiro Taniguchi, Nara, JP;
Masanori Seki, Tenri, JP;
Hiroshi Tsunasawa, Kyoto-fu, JP;
Ikumi Kashiwagi, Tenri, JP;
Tetsuya Inui, Nara, JP;
Junichiro Nakayama, Kyoto-fu, JP;
Yoshihiro Taniguchi, Nara, JP;
Masanori Seki, Tenri, JP;
Hiroshi Tsunasawa, Kyoto-fu, JP;
Ikumi Kashiwagi, Tenri, JP;
Sharp Kabushiki Kaisha, Osaka, JP;
Abstract
A first laser beam is emitted from a first laser oscillator in a pulsed manner at a high repetition frequency, and converged onto a substrate by a first intermediate optical systemso as to form a slit-like first beam spot. A second laser beam is emitted from a second laser beam oscillator in a pulsed manner to rise precedent to and fall subsequent to the first laser beam, and converged onto the substrate by a second intermediate optical system so as to form a second beam spot similar in configuration to the first beam spot and to contain the first beam spot. Crystallization of a semiconductor thin film on the substrate is carried out while the substrate or the first, second beam spots are moved. Thereby, the whole semiconductor thin film is formed into a crystal surface that has grown in one direction and free from ridges. Thus, the semiconductor thin film has an extremely flat surface, extremely few defects, large crystal grains and high throughput.