The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 03, 2008
Filed:
Apr. 10, 2002
Applicants:
Victor Y. LU, Santa Cruz, CA (US);
Roger Y. Leung, San Jose, CA (US);
Eric Deng, Fremont, CA (US);
Songyuan Xie, Newark, CA (US);
Inventors:
Victor Y. Lu, Santa Cruz, CA (US);
Roger Y. Leung, San Jose, CA (US);
Eric Deng, Fremont, CA (US);
Songyuan Xie, Newark, CA (US);
Assignee:
Honeywell International Inc., Morristown, NJ (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B05D 3/02 (2006.01);
U.S. Cl.
CPC ...
Abstract
The invention relates to the production of nanoporous silica dielectric films and to semiconductor devices and integrated circuits comprising these improved films. The nanoporous films of the invention are prepared using silicon containing pre-polymers and are prepared by a process that allows crosslinking at lowered gel temperatures by means of a metal-ion-free onium or nucleophile catalyst.