The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 03, 2008

Filed:

Nov. 01, 2006
Applicants:

Ramkumar Subramanian, Sunnyvale, CA (US);

Bhanwar Singh, Morgan Hill, CA (US);

Khoi a Phan, San Jose, CA (US);

Srikanteswara Dakshina-murthy, Wappingers Falls, NY (US);

Inventors:

Ramkumar Subramanian, Sunnyvale, CA (US);

Bhanwar Singh, Morgan Hill, CA (US);

Khoi A Phan, San Jose, CA (US);

Srikanteswara Dakshina-Murthy, Wappingers Falls, NY (US);

Assignee:

Advanced Micro Devices, Inc., Austin, TX (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03B 27/42 (2006.01);
U.S. Cl.
CPC ...
Abstract

Disclosed are immersion lithography methods involving irradiating a first photoresist through a lens and an immersion liquid, the immersion liquid contacting the lens and the first photoresist in a first apparatus; contacting the lens with a supercritical fluid in a second apparatus; and irradiating a second photoresist through the lens and an immersion liquid, the immersion liquid contacting the lens and the second photoresist in the first apparatus.


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