The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 27, 2008
Filed:
Nov. 23, 2005
Bruno Ghyselen, Seyssinet-Pariset, FR;
Cécile Aulnette, Grenoble, FR;
Bénédite Osternaud, Saint Egreve, FR;
Yves-mathieu Le Vaillant, Crolles, FR;
Takeshi Akatsu, Saint Nazaire les Eymes, FR;
Bruno Ghyselen, Seyssinet-Pariset, FR;
Cécile Aulnette, Grenoble, FR;
Bénédite Osternaud, Saint Egreve, FR;
Yves-Mathieu Le Vaillant, Crolles, FR;
Takeshi Akatsu, Saint Nazaire les Eymes, FR;
S.O.I.Tec Silicon on Insulator Technologies, Bernin, FR;
Abstract
A donor wafer resulting from a method of recycling the wafer after detaching at least one useful layer. The donor wafer includes a substrate; a buffer structure on the substrate; a protective layer associated with the buffer structure; and a post detachment layer located above the buffer structure and presenting projections or rough portions on its surface. The protective layer prevents removal of the entire buffer structure when the post detachment layer is removed.