The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 27, 2008
Filed:
Aug. 08, 2006
Dale W. Martin, Hyde Park, VT (US);
Steven M. Shank, Jericho, VT (US);
Michael C. Triplett, Colchester, VT (US);
Deborah A. Tucker, Westford, VT (US);
Dale W. Martin, Hyde Park, VT (US);
Steven M. Shank, Jericho, VT (US);
Michael C. Triplett, Colchester, VT (US);
Deborah A. Tucker, Westford, VT (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A gate stack structure. The structure includes (a) a semiconductor region and (b) a gate stack on top of the semiconductor region. The gate stack includes (i) a gate dielectric region on top of the semiconductor region, (ii) a first gate polysilicon region on top of the gate dielectric region, and (iii) a second gate polysilicon region on top of the first gate polysilicon region and doped with a type of dopants. The structure further includes (c) a diffusion barrier region and a spacer oxide region on a side wall of the gate stack. The diffusion barrier region (i) is sandwiched between the gate stack and the spacer oxide region and (ii) is in direct physical contact with both the first and second gate polysilicon regions, and (iii) comprises a material having a property of preventing a diffusion of oxygen-containing materials through the diffusion barrier region.