The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 27, 2008
Filed:
Mar. 04, 2005
Sachie Shinmaru, Kanagawa, JP;
Hiroyuki Kamiya, Kanagawa, JP;
Atsushi Hayashi, Kanagawa, JP;
Katsuyuki Tsugita, Kanagawa, JP;
Sachie Shinmaru, Kanagawa, JP;
Hiroyuki Kamiya, Kanagawa, JP;
Atsushi Hayashi, Kanagawa, JP;
Katsuyuki Tsugita, Kanagawa, JP;
Asahi Glass Company, Limited, Tokyo, JP;
Seimi Chemical Co., Ltd., Chigasaki-shi, JP;
Abstract
An insulating film comprising an organic silicon material having a C—Si bond and a Si—O bond is used for a semiconductor integrated circuit, and for polishing of its surface, a polishing compound comprising water and particles of at least one specific rare earth compound selected from the group consisting of a rare earth oxide, a rare earth fluoride, a rare earth oxyfluoride, a rare earth oxide except cerium oxide and a composite compound thereof, or a polishing compound having the above composition and further containing cerium oxide particles, is used. It is possible to provide a high quality polished surface which is free from or has reduced defects such as cracks, scratches or film peeling.