The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 27, 2008
Filed:
Jul. 07, 2005
Hyon-jong Cho, Gumi-si, KR;
Cheol-woo Lee, Gumi-Si, KR;
Hong-woo Lee, Gumi-Si, KR;
Cheong Jin Soo, Seoul, KR;
Kim Sunmi, Seoul, KR;
Hyon-Jong Cho, Gumi-si, KR;
Cheol-Woo Lee, Gumi-Si, KR;
Hong-Woo Lee, Gumi-Si, KR;
Cheong Jin Soo, Seoul, KR;
Kim Sunmi, Seoul, KR;
Siltron Inc., Kumi, KR;
Abstract
A method for growing a silicon single crystal ingot by a Czochralski method, which is capable of providing silicon wafers having very uniform in-plane quality and which results in improvement of semiconductor device yield. A method is provided for producing a silicon single crystal ingot by a Czochralski method, wherein when convection of a silicon melt is divided into a core cell and an outer cell, the silicon single crystal ingot is grown under the condition that the maximal horizontal direction width of the core cell is 30 to 60% of a surface radius of the silicon melt. In one embodiment the silicon single crystal ingot is grown under the condition that the maximal vertical direction depth of the core cell is equal to or more than 50% of the maximal depth of the silicon melt.