The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 20, 2008
Filed:
Apr. 06, 2006
Hua Qian, Shanghai, CN;
Ching Thiam Chung, Singapore, SG;
Hua Qian, Shanghai, CN;
Ching Thiam Chung, Singapore, SG;
Chartered Semiconductor Manufacturing, Ltd., Singapore, SG;
Abstract
An example method of monitoring and measuring the line width of interconnects comprising the following steps. First, we measure an I-V profile of a sample interconnect structure to obtain a sample I-V profile. The I-V profile is comprised of leakage current measurements at two or more voltages. The sample interconnect structure is comprised of spaced lines having a line spacing. Next we compare the sample I-V profile with a reference I-V profile at a reference line spacing to determine if sample interconnect structure is not defective. If the sample I-V profile is similar to the reference I-V profile, then leakage currents for the sample interconnect structure are derived from the I-V profiles at a selected voltages. Then we calculate the line spacing of the sample interconnect structure using the sample I-V profile.
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