The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 20, 2008
Filed:
Oct. 11, 2005
Chih-hua Lee, Hsinchu, TW;
Ming-i Chen, Hsinchu, TW;
Chih-Hua Lee, Hsinchu, TW;
Ming-I Chen, Hsinchu, TW;
United Microelectronics Corp., Hsinchu, TW;
Abstract
A high voltage metal oxide semiconductor device comprising a substrate, an N-type epitaxial layer, an isolation structure, a gate dielectric layer, a gate, an N-type drain region, a P-type well, an N-type source region, a first N-type well and a buried N-doped region is provided. The first N-type well is disposed in the N-type epitaxial layer under the isolation structure and on one side of the gate. The first N-type well overlaps with the N-type drain region. The buried N-doped region is disposed in the substrate under the N-type epitaxial layer and connected to the first N-type well.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile