The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 20, 2008
Filed:
Jun. 21, 2005
Tomoyuki Ishii, Kodaira, JP;
Toshiyuki Mine, Fussa, JP;
Toshiaki Sano, Kodaira, JP;
Norifumi Kameshiro, Kokubunji, JP;
Tomoyuki Ishii, Kodaira, JP;
Toshiyuki Mine, Fussa, JP;
Toshiaki Sano, Kodaira, JP;
Norifumi Kameshiro, Kokubunji, JP;
Renesas Technology Corp., Tokyo, JP;
Abstract
The present invention is a semiconductor memory device having a logic block and a memory block on the same chip. In the memory device, unit memory cells each include at least two transistors, one of which is a write transistor for storing an electric charge into and releasing it from an electric charge storage node, and the other is a read transistor whose conductance in a channel region provided between a source and drain of the read transistor is modulated dependently on the amount of electric charge stored into or released from the electric charge storage node by the write transistor. The read transistor has a gate-insulating film thicker than that of a transistor provided in the logic block, and uses the same diffusion layer structure as that of the logic block.