The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 20, 2008
Filed:
Aug. 13, 2003
Applicants:
Kazuo Yamazaki, Kokubunji, JP;
Shinji Kuniyoshi, Tokyo, JP;
Kousuke Kusakari, Hitachinaka, JP;
Takenobu Ikeda, Ome, JP;
Masahiro Tadokoro, Hachiouji, JP;
Inventors:
Kazuo Yamazaki, Kokubunji, JP;
Shinji Kuniyoshi, Tokyo, JP;
Kousuke Kusakari, Hitachinaka, JP;
Takenobu Ikeda, Ome, JP;
Masahiro Tadokoro, Hachiouji, JP;
Assignee:
Renesas Technology Corp., Tokyo, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/302 (2006.01);
U.S. Cl.
CPC ...
Abstract
To improve the shape of a gate electrode having SiGe, after patterning a gate electrodeG having an SiGe layerby a dry etching process, a plasma processing (postprocessing) is carried out in an atmosphere of an Ar/CHFgas. Thereby, the gate electrodeG can be formed without causing side etching at two side faces (SiGe layer) of the gate electrodeG.