The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 20, 2008
Filed:
Mar. 07, 2005
Bruno Ghyselen, Seyssinet-Pariset, FR;
Cécile Aulnette, Grenoble, FR;
Bénédite Osternaud, Saint Laurent du Pont, FR;
Takeshi Akatsu, Saint Nazaire les Eymes, FR;
Bruce Faure, Grenoble, FR;
Bruno Ghyselen, Seyssinet-Pariset, FR;
Cécile Aulnette, Grenoble, FR;
Bénédite Osternaud, Saint Laurent du Pont, FR;
Takeshi Akatsu, Saint Nazaire les Eymes, FR;
Bruce Faure, Grenoble, FR;
S.O.I.Tec Silicon on Insulator Technologies, Bernin, FR;
Abstract
The invention relates to a method of re-forming a useful layer on a donor wafer after taking off a useful layer formed of a material chosen from among semiconductor materials. The donor wafer includes in succession a substrate and a taking-off structure, the taking-off structure includes the taken-off useful layer before taking-off. The method includes a removal of material involving a portion of the donor wafer on the side where the useful layer has been taken off. The material is removed by mechanical means so as to preserve a portion of the taking-off structure to form at least one other useful layer which can be taken off after re-forming, without adding additional material to the wafer.