The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 20, 2008

Filed:

Oct. 08, 2004
Applicants:

Chris D. Atkinson, Lewisville, TX (US);

Richard L. Guldi, Dallas, TX (US);

Shangting Detweiler, Dallas, TX (US);

Inventors:

Chris D. Atkinson, Lewisville, TX (US);

Richard L. Guldi, Dallas, TX (US);

Shangting Detweiler, Dallas, TX (US);

Assignee:
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G03F 7/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

According to one embodiment of the present invention, a method of forming a semiconductor device includes forming a photoresist layer on a surface of a wafer. The wafer includes an array of die that includes a plurality of complete die and at least one partial edge die. The wafer has an edge that has a substantially rounded profile causing undersized patterns in semiconductor devices formed on partial edge die. A first exposure intensity is assigned to a first group of die on the surface of the wafer. The first group of die includes a group of complete die, and the first exposure intensity is assigned based at least in part on the location of the first group of die on the surface of the wafer. A second exposure intensity is assigned to a second group of die on the surface of the wafer. The second group of die includes at least one partial edge die. The second exposure intensity less than the first exposure intensity to compensate for reduced line width due to the wafer edge topography. Energy is directed at the second group of die at the second exposure intensity to avoid over-exposure of the second group of die.


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