The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 20, 2008
Filed:
Oct. 10, 2002
John Kouvetakis, Mesa, AZ (US);
Ignatius S. Tsong, Tempe, AZ (US);
Levi Torrison, Mesa, AZ (US);
John Tolle, Gilbert, AZ (US);
John Kouvetakis, Mesa, AZ (US);
Ignatius S. Tsong, Tempe, AZ (US);
Levi Torrison, Mesa, AZ (US);
John Tolle, Gilbert, AZ (US);
Abstract
Novel superhard dielectric compounds useful as gate dielectrics discovered. Low temperature methods for making thin films of the compounds on substrate silicon are provided. The methods comprise the step of contacting a precursor having the formula HX—O—XH, wherein X is silicon or carbon with a compound comprising boron or nitrogen in a chemical vapor deposition (CVD) chamber or with one or more atomic elements in a molecular beam epitaxial deposition (MBE) chamber. These thin film constructs are useful as components of microelectronic devices, and specifically as gate dielectrics in CMOS devices.