The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 7374474 B1

PDF
Full Text
Expired
Date of Patent:
May. 20, 2008

Filed:

Oct. 08, 2002
Applicants:

Masaya Nishiyama, Hitachi, JP;

Masanobu Habiro, Hitachi, JP;

Yasuhito Iwatsuki, Tokyo, JP;

Hirokazu Hiraoka, Tokyo, JP;

Inventors:

Masaya Nishiyama, Hitachi, JP;

Masanobu Habiro, Hitachi, JP;

Yasuhito Iwatsuki, Tokyo, JP;

Hirokazu Hiraoka, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B24B 1/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

In CMP technology for planarizing an interlayer insulation film, a BPSG film, an insulation film for shallow trench isolation, or the like, in the production process of a semiconductor element, irregularities of a matter being polished, e.g. a silicon oxide film, are planarized efficiently at a high speed while suppressing the occurrence of polishing flaws on the substrate by employing a polishing pad having organic fibers exposed on the surface thereof abutting against the matter being polished.


Find Patent Forward Citations

Nishiyama, Masaya. (2008). Polishing pad for cmp, method for polishing substrate using it and method for producing polishing pad for cmp (U.S. Patent No. 7374474). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7374474

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