The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 13, 2008
Filed:
Oct. 18, 2002
Nobuyuki Negishi, Kodaira, JP;
Kenetsu Yokogawa, Tsurugashima, JP;
Masaru Izawa, Hino, JP;
Hitachi, Ltd., Tokyo, JP;
Abstract
The object of this invention is to provide a method for fabricating a semiconductor device in which the yield and productivity are improved. In the method for fabricating a semiconductor device according to the invention, a plasma etching system is prepared which includes a vacuum chamber, a susceptorarranged in the vacuum chamberto place a wafer, a gas introducing meansto introduce the material gas into the vacuum chamber and a high-frequency power introducing means. The gas introduced into the vacuum chamber by the gas introducing meansis converted into a plasma by the high-frequency power, and a plurality of holes are selectively formed in the oxide filmof a main wafer surface in a plasma atmosphere. In the hole forming step, lighthaving a continuous spectrum is irradiated on a flat portion and a hole portion of the main surface of the semiconductor wafer thereby to measure the reflectivity change in the flat portion and the hole portion.