The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 13, 2008
Filed:
Jul. 12, 2006
Applicants:
Dae-sik Park, Hwasung-si, KR;
Jin-yub Lee, Seoul, KR;
Inventors:
Dae-Sik Park, Hwasung-si, KR;
Jin-Yub Lee, Seoul, KR;
Assignee:
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03K 3/00 (2006.01);
U.S. Cl.
CPC ...
Abstract
A power-voltage driver circuit includes a first MOS transistor configured to turn a second MOS transistor off when a high-voltage generator provides a high voltage output. Related methods are also disclosed.
Quick Actions:
Park, Dae-Sik. (2008). High-voltage generation circuits and nonvolatile semiconductor memory device with improved high-voltage efficiency and methods of operating (U.S. Patent No. 7372308). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7372308
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile