The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 13, 2008
Filed:
Aug. 04, 2005
Yasuhiko Onishi, Nagano, JP;
Takeyoshi Nishimura, Nagano, JP;
Yasushi Niimura, Nagano, JP;
Masanori Inoue, Nagano, JP;
Yasuhiko Onishi, Nagano, JP;
Takeyoshi Nishimura, Nagano, JP;
Yasushi Niimura, Nagano, JP;
Masanori Inoue, Nagano, JP;
Abstract
The superjunction semiconductor device includes a drain drift section, which includes a first alternating conductivity type layer formed of first n-type regions and first p-type regions arranged alternately. The device also includes a peripheral section around the drain drift section, which includes a second alternating conductivity type layer formed of second n-type regions and second p-type regions arranged alternately. The peripheral section further includes a third alternating conductivity type layer in its surface portion. The third alternating conductivity type layer is formed of third n-type regions and third p-type regions arranged alternately. At least the peripheral section is configured to improve the avalanche withstanding capability over the entire device.