The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 13, 2008

Filed:

Jun. 13, 2001
Applicants:

Kiyoshi Ishibashi, Tokyo, JP;

Makio Horikawa, Tokyo, JP;

Mika Okumura, Tokyo, JP;

Masaaki Aoto, Kumamoto, JP;

Daisaku Yoshida, Kumamoto, JP;

Hirofumi Takakura, Kumamoto, JP;

Inventors:

Kiyoshi Ishibashi, Tokyo, JP;

Makio Horikawa, Tokyo, JP;

Mika Okumura, Tokyo, JP;

Masaaki Aoto, Kumamoto, JP;

Daisaku Yoshida, Kumamoto, JP;

Hirofumi Takakura, Kumamoto, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 29/82 (2006.01);
U.S. Cl.
CPC ...
Abstract

A thin-film structural body formed by using a semiconductor processing technique and a manufacturing method thereof, and particularly a thin-film structural body constituting a semiconductor acceleration sensor and a manufacturing method thereof. The thin-film structural body allows the thin-film member to be easily stress-controlled, and easily makes the film-thickness of the thin-film member thicker. The thin-film member forms a mass body and, beams and fixed electrodes of the semiconductor acceleration sensor are constituted by a plurality of doped polysilicon thin-films that are laminated by performing a step of film deposition of polysilicon while, for example, phosphorous is being doped as impurities plural times.


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