The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 06, 2008
Filed:
Apr. 10, 2006
Applicant:
Hiroaki Tanizaki, Itami, JP;
Inventor:
Hiroaki Tanizaki, Itami, JP;
Assignee:
Renesas Technology Corp., Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G11C 11/00 (2006.01);
U.S. Cl.
CPC ...
Abstract
A tunneling magneto-resistance element is arranged on an upper layer side of a digit line. The tunneling magneto-resistance element is electrically coupled to a source/drain region of an access transistor through a strap and a contact hole. A bit line is electrically coupled to the tunneling magneto-resistance element, and arranged on the upper layer side of the tunneling magneto-resistance element. A plurality of tunneling magneto-resistance elements share one access transistor, so that a non-volatile memory device achieving low area penalty and higher integration can be implemented.