The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 06, 2008

Filed:

Jul. 20, 2006
Applicants:

Hidetoshi Matsumoto, Kokubunji, JP;

Tomonori Tanoue, Machida, JP;

Isao Ohbu, Sagamihara, JP;

Inventors:

Hidetoshi Matsumoto, Kokubunji, JP;

Tomonori Tanoue, Machida, JP;

Isao Ohbu, Sagamihara, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03G 5/16 (2006.01);
U.S. Cl.
CPC ...
Abstract

In a base-bias-control-type high-frequency power amplifier with a plural stage configuration, a rising voltage of a base bias current supplied to an initial stage transistor is made lower than a rising voltage of a base bias current supplied to a second stage transistor by a bias circuit, and a difference between the both voltages is set to be smaller than a base-emitter voltage of an amplifying stage transistor. Also, a rising voltage of a base bias current supplied to a third stage transistor is made equal to the rising voltage of the base bias current supplied to an initial stage transistor. Accordingly, a technology capable of improving the power control linearity can be provided in a high-frequency power amplifier used in a polar-loop transmitter or the like.


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