The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 06, 2008
Filed:
Dec. 12, 2005
Jun Komiyama, Hadano, JP;
Yoshihisa Abe, Sagamihara, JP;
Shunichi Suzuki, Hadano, JP;
Hideo Nakanishi, Hadano, JP;
Jun Komiyama, Hadano, JP;
Yoshihisa Abe, Sagamihara, JP;
Shunichi Suzuki, Hadano, JP;
Hideo Nakanishi, Hadano, JP;
Covalent Materials Corporation, Tokyo, JP;
Abstract
A back electrodeis formed in the back of a Si single crystal substrateof a compound semiconductor in which an n-type 3C-SiC single crystal buffer layerhaving a thickness of 0.05-2 μm, a carrier concentration of 10-10/cm, a hexagonal InGaAlN single crystal buffer layer(0≦w<1, 0≦x<1, w+x<1) having a thickness of 0.01-0.5 μm, and an n-type hexagonal InGaAlN single crystal layer(0≦y<1, 0<z≦1, y+z≦1) having a thickness of 0.1-5 μm and a carrier concentration of 10-10/cmare stacked in order on an n-type Si single crystal substrate tophaving a crystal-plane orientation {111}, a carrier concentration of 10-10/cm, and a surface electrodeis formed on a surface of a hexagonal InGaAlN single crystal layer, so as to provide a compound semiconductor device which causes little energy loss and allows an high efficiency and a high breakdown voltage.