The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 06, 2008
Filed:
Jul. 01, 2005
James M. Mrvos, Lexington, KY (US);
Girish S. Patil, Lexington, KY (US);
Karthik Vaideeswaran, Troy, NY (US);
James M. Mrvos, Lexington, KY (US);
Girish S. Patil, Lexington, KY (US);
Karthik Vaideeswaran, Troy, NY (US);
Lexmark International, Inc., Lexington, KY (US);
Abstract
A process for etching semiconductor substrates using a deep reactive ion etching process to produce through holes or slots (referred to collectively as 'slots') in the substrates. The process includes applying a first layer to a first surface of substrate to provide an etch mask material layer on the first surface of the substrate. A second layer is applied to a second surface of the substrate to provide an etch stop material layer on the second surface of the substrate. The first layer and the second layer have similar solubilities in one or more organic solvents. The substrate is etched from the first surface of the wafers to provide a slot in the substrate. After etching the substrate, the etch mask material layer and the etch stop material layer are removed by contacting the first surface and the second surface of the substrate with a single organic solvent.