The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 29, 2008

Filed:

Apr. 12, 2005
Applicants:

Tatsuya Ogino, Kanagawa, JP;

Akihiko Okubora, Kanagawa, JP;

Takayuki Hirabayashi, Tokyo, JP;

Takahiko Kosemura, Kanagawa, JP;

Kuniyuki Hayashi, Oita, JP;

Inventors:

Tatsuya Ogino, Kanagawa, JP;

Akihiko Okubora, Kanagawa, JP;

Takayuki Hirabayashi, Tokyo, JP;

Takahiko Kosemura, Kanagawa, JP;

Kuniyuki Hayashi, Oita, JP;

Assignee:

Sony Corporation, Tokyo, JP;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
G06F 17/50 (2006.01); G06F 17/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

The present invention relates to a high frequency module board device having a high frequency transmitting and receiving circuit for modulating and demodulating a high frequency signal. The high frequency module board device comprises a base board () whose main surface is formed as a build-up surface () and a high frequency circuit part () formed on the build-up surface of the base board () and having passive elements formed. The base board () has an area () in which wiring is not formed in a lower layer from a fourth wiring layer (). The high frequency circuit part () has an upper electrode part () and a lower electrode part () in positions corresponding to the area () in which the wiring is not formed. Thus, since a capacitance () is provided just above the area () in which the wiring is not formed, a parasitic capacity that the capacitance () receives from ground patterns () is reduced. Accordingly, the characteristics of the capacitance () can be improved.


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