The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 29, 2008

Filed:

Jan. 31, 2007
Applicants:

Takashi Kobayashi, Tokorozawa, JP;

Hideaki Kurata, Kokubunji, JP;

Naoki Kobayashi, Tokyo, JP;

Hitoshi Kume, Musashino, JP;

Katsutaka Kimura, Akishima, JP;

Shunichi Saeki, Ome, JP;

Inventors:

Takashi Kobayashi, Tokorozawa, JP;

Hideaki Kurata, Kokubunji, JP;

Naoki Kobayashi, Tokyo, JP;

Hitoshi Kume, Musashino, JP;

Katsutaka Kimura, Akishima, JP;

Shunichi Saeki, Ome, JP;

Assignees:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/34 (2006.01);
U.S. Cl.
CPC ...
Abstract

A semiconductor integrated device having a plurality of memory cells, each including a floating gate, a control gate and an auxiliary gate formed over a side surface of the floating gate through an insulator film. Auxiliary gates coupled to selected memory cells function to generate hot electrons and are alternately arranged with other auxiliary gates functioning to prevent write errors in the non-selected memory cells.


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