The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 29, 2008
Filed:
May. 02, 2007
Xudong Shi, Sunnyvale, CA (US);
Kun-yung Chang, Los Altos, CA (US);
Xudong Shi, Sunnyvale, CA (US);
Kun-Yung Chang, Los Altos, CA (US);
Rambus Inc., Los Altos, CA (US);
Abstract
A PLL/DLL circuit is current self-biased responsive to a current Iprovided from a voltage regulator to a VCO or VCDL. Bias current I, which is proportional to I, is provided to components of the PLL/DLL, such as a charge pump or loop resistor, from an interconnect coupled to the voltage regulator. In an embodiment of the present invention, a component of the PLL/DLL includes a bias-generating device, such as a MOSFET p-type transistor having a drain coupled to the interconnect. In an embodiment of the present invention, a voltage regulator includes an AMP having a bias-generating device, such as a p-type transistor, acting as a current source, having a source coupled to Vand a drain coupled to the interconnect. The gate of the bias-generating device is coupled to the gate of four other p-type devices. Each of the four p-type devices has a source coupled to V. The drains of the first and second p-type transistors are coupled to an output providing I. A negative input of the AMP ('INM') is coupled to the gate of a first n-type transistor and a positive input of the AMP ('INP') is coupled to the gate of a second n-type transistor. The drains of the first and second n-type transistors are coupled to the drains of the second and third p-type transistors. The sources of the first and second n-type transistors are coupled to the drain of a third n-type transistor. The source of the third n-type transistor is coupled to ground and the gate is coupled to a fourth n-type transistor. The drain of the fourth n-type transistor is coupled to the drain of the fourth p-type transistor and the source of the fourth n-type transistor is coupled to ground.