The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 29, 2008
Filed:
Dec. 07, 2005
Hwa-sung Rhee, Seongnam-si, KR;
Hion-suck Baik, Cheonan-si, KR;
Dong-suk Shin, Yongin-si, KR;
Tetsuji Ueno, Suwon-si, KR;
Seung-hwan Lee, Suwon-si, KR;
Ho Lee, Cheonan-si, KR;
Hwa-sung Rhee, Seongnam-si, KR;
Hion-suck Baik, Cheonan-si, KR;
Dong-suk Shin, Yongin-si, KR;
Tetsuji Ueno, Suwon-si, KR;
Seung-hwan Lee, Suwon-si, KR;
Ho Lee, Cheonan-si, KR;
Abstract
Methods of fabricating semiconductor devices having a carbon-containing metal silicide layer and semiconductor devices fabricated by the methods are provided. A representative method includes the steps of preparing a semiconductor substrate and forming a gate electrode and source/drain regions on the semiconductor substrate, such that the gate electrode has a first metal silicide layer on an upper part thereof which contains carbon and the source/drain regions have second metal silicide layers on their substantially carbon-free upper parts.