The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 29, 2008
Filed:
Sep. 11, 2003
Applicants:
Michael J. Evans, Cambridge, GB;
William R. Tribe, Cambridge, GB;
Inventors:
Michael J. Evans, Cambridge, GB;
William R. Tribe, Cambridge, GB;
Assignee:
TeraView Limited, Cambridge, GB;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/265 (2006.01);
U.S. Cl.
CPC ...
Abstract
A semiconductor material with photoconductive properties and a method of the semiconductor, wherein a base material is grown and then annealed post-growth at a temperature of 475° C. or less. It has been found that be annealing at temperatures of 475° C., or less the carrier lifetime of the material and the resistivity can be optimized so as to obtain semiconductor with useful photoconductive properties.