The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 29, 2008
Filed:
Nov. 12, 2004
Osamu Tonomura, Kokubunji, JP;
Hiroshi Miki, Tokyo, JP;
Yuichi Matsui, Koganei, JP;
Tomoko Sekiguchi, Hino, JP;
Kikuo Watanabe, Sayama, JP;
Osamu Tonomura, Kokubunji, JP;
Hiroshi Miki, Tokyo, JP;
Yuichi Matsui, Koganei, JP;
Tomoko Sekiguchi, Hino, JP;
Kikuo Watanabe, Sayama, JP;
Hitachi, Ltd., Tokyo, JP;
Abstract
A semiconductor device having a DRAM has a capacitor in which a dielectric film and an upper electrode are laminated on a lower electrode comprising a polysilicone, in which a natural oxide film oxidized by oxygen in the atmosphere grows to at least 1.5 nm on the surface of a lower electrode of the capacitor. Further, in forming the dielectric film, the dioxide film further grows in the case of using an oxidative raw material. This brings forth a reduction in capacitance, and an increase of a leakage current is caused. Therefore, after a dielectric film having a reduction property has been formed, the reduction property is promoted by a heat treatment to thereby reduce a dioxide film and realize making the dioxide film on the lower electrode surface thinner.