The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 29, 2008
Filed:
Aug. 24, 2005
Go Saito, Hikari, JP;
Toshiaki Nishida, Kudamatsu, JP;
Takahiro Shimomura, Kudamatsu, JP;
Takao Arase, Kudamatsu, JP;
Go Saito, Hikari, JP;
Toshiaki Nishida, Kudamatsu, JP;
Takahiro Shimomura, Kudamatsu, JP;
Takao Arase, Kudamatsu, JP;
Hitachi High-Technologies Corporation, Tokyo, JP;
Abstract
A method for manufacturing semiconductor devices includes a step of etching a sample including an interlayer insulating layer containing AlOand a polysilicon or SiOlayer in contact with the interlayer insulating layer using a plasma etching system. The interlayer insulating layer is etched with a gas mixture containing BCl, Ar, and CHor He. The gas mixture further contains Cl. The interlayer insulating layer is etched in such a manner that a time-modulated high-frequency bias voltage is applied to the sample. The interlayer insulating layer is etched in such a manner that the sample is maintained at a temperature of 100° C. to 200° C. The interlayer insulating layer and the polysilicon or SiOlayer are separately etched in different chambers.