The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 22, 2008
Filed:
Mar. 23, 2004
Akira Hirano, Ikoma, JP;
Satoshi Kamiyama, Nagoya, JP;
Hiroshi Amano, Nagoya, JP;
Isamu Akasaki, Nagoya, JP;
Akira Hirano, Ikoma, JP;
Satoshi Kamiyama, Nagoya, JP;
Hiroshi Amano, Nagoya, JP;
Isamu Akasaki, Nagoya, JP;
UV Craftory Co., Ltd., Aichi, JP;
Abstract
In order to provide a filter device capable of maintaining stable optical characteristics for an extended period of time and to provide also a photosensor using the filter device, a photosensor having a filter function includes a filter device having a colored glass filter and configured for permitting transmission of light of a predetermined wavelength range including a detection target wavelength range and a light receiving device for receiving the light transmitted through the filter device. The filter device includes a first interference filter structure comprised of a plurality of light transmitting layers stacked on each other, the first interference filter structure being deposited on a face of the colored glass filter. The light receiving device includes a semiconductor photodetector structure having one or more semiconductor layers, a light receiving area being formed in the one or more semiconductor layers within the semiconductor photodetector structure. The one or more semiconductor layers forming the semiconductor photodetector structure contain InAlGaN (0≦x≦0.21, 0≦y≦1).