The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 22, 2008
Filed:
Jun. 30, 2006
Applicants:
Chi-lin Chen, Hsinchu, TW;
Shun-fa Huang, Chang Hua, TW;
Liang-tang Wang, Tainan, TW;
Inventors:
Assignee:
Industrial Technology Research Institute, Chutung Town, Hsinchu Hsien, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/336 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method of forming poly-silicon thin film transistors is described. An amorphous silicon thin film transistor is formed on a substrate, and then the Infrared (IR) heating process is used. A gate metal and source/drain metal are heated rapidly, and conduct heat energy to an amorphous silicon layer. Next, crystallization occurs in the amorphous silicon layer to form poly-silicon. Therefore a poly-silicon thin film transistor is produced.