The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 22, 2008
Filed:
Jan. 18, 2005
Jeong-ho Shin, Euiwang-si, KR;
Jong-hyon Ahn, Suwon-si, KR;
Kong-soo Cheong, Seoul, KR;
Jin-won Jun, Seoul, KR;
Jeong-Ho Shin, Euiwang-si, KR;
Jong-Hyon Ahn, Suwon-si, KR;
Kong-Soo Cheong, Seoul, KR;
Jin-Won Jun, Seoul, KR;
Abstract
In a method of forming a metal gate in a semiconductor device, a gate insulation pattern and a dummy gate pattern are formed on a substrate. An insulation interlayer is formed on the dummy gate pattern to cover the dummy gate pattern. The insulation interlayer is polished such that a top surface of the dummy gate pattern is exposed, and the dummy gate pattern is selectively removed to form a trench on the substrate. A gate spacer is formed on an inner sidewall of the trench for determining a gate length of the metal gate. A metal is deposited to a sufficient thickness to fill the trench to form a metal layer. The metal layer is polished to remain in the trench. Accordingly, the gate length of the metal gate may be reduced no more than the resolution limit of the photolithography exposing system.