The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 22, 2008
Filed:
Feb. 18, 2003
Selena Chan, Sunnyvale, CA (US);
Sunghoon Kwon, Albany, CA (US);
Narayan Sundararajan, San Francisco, CA (US);
Selena Chan, Sunnyvale, CA (US);
Sunghoon Kwon, Albany, CA (US);
Narayan Sundararajan, San Francisco, CA (US);
Intel Corporation, Santa Clara, CA (US);
Abstract
The methods, systemsand apparatus disclosed herein concern metalimpregnated porous substratesCertain embodiments of the invention concern methods for producing metal-coated porous silicon substratesthat exhibit greatly improved uniformity and depth of penetration of metaldeposition. The increased uniformity and depth allow improved and more reproducible Raman detection of analytes. In exemplary embodiments of the invention, the methods may comprise oxidation of porous siliconimmersion in a metal salt solutiondrying and thermal decomposition of the metal saltto form a metal depositIn other exemplary embodiments of the invention, the methods may comprise microfluidic impregnation of porous silicon substrateswith one or more metal salt solutionsOther embodiments of the invention concern apparatus and/or systemsfor Raman detection of analytes, comprising metal-coated porous silicon substratesprepared by the disclosed methods.